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SI4116DY-T1-GE3 N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
Price & Procurement
5,465 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.05000 $1.05
10 0.94100 $9.41
25 0.89280 $22.32
100 0.66970 $66.97
250 0.66332 $165.83
500 0.56764 $283.82
1,000 0.46241 $462.41
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Alternate Package
  • Tape & Reel (TR)  : SI4116DY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 5,000 - Immediate
  • Unit Price: $0.45603
  • Digi-Reel®  : SI4116DY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 5,465 - Immediate
  • Unit Price: Digi-Reel®

SI4116DY-T1-GE3

Datasheet
Digi-Key Part Number SI4116DY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI4116DY-T1-GE3
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Description MOSFET N-CH 25V 18A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO

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Documents & Media
Datasheets SI4116DY
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI4116DY
EDA / CAD Models Download from Ultra Librarian
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1925pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4116
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI4116DY-T1-GE3CT