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SI4056DY-T1-GE3 N-Channel 100V 11.1A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO
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6,613 In Stock
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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.86000 $0.86
10 0.75900 $7.59
25 0.71320 $17.83
100 0.51750 $51.75
250 0.49912 $124.78
500 0.43240 $216.20
1,000 0.36800 $368.00
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Alternate Package
  • Tape & Reel (TR)  : SI4056DY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 5,000 - Immediate
  • Unit Price: $0.34500
  • Digi-Reel®  : SI4056DY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 6,613 - Immediate
  • Unit Price: Digi-Reel®

SI4056DY-T1-GE3

Datasheet
Digi-Key Part Number SI4056DY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI4056DY-T1-GE3
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Description MOSFET N-CH 100V 11.1A 8SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 100V 11.1A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO

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Documents & Media
Datasheets Si4056DY
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
HTML Datasheet Si4056DY
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 50V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4056
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4056DY-T1-GE3CT