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SI3499DV-T1-GE3 P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Price & Procurement
11,917 In Stock
Can ship immediately
 

Quantity
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Price Break Unit Price Extended Price
1 0.99000 $0.99
10 0.88100 $8.81
100 0.68700 $68.70
500 0.56754 $283.77
1,000 0.44805 $448.05
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  • Tape & Reel (TR)  : SI3499DV-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 9,000 - Immediate
  • Unit Price: $0.40600
  • Digi-Reel®  : SI3499DV-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 11,917 - Immediate
  • Unit Price: Digi-Reel®

SI3499DV-T1-GE3

Datasheet
Digi-Key Part Number SI3499DV-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI3499DV-T1-GE3
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Description MOSFET P-CH 8V 5.3A 6-TSOP
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP

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Documents & Media
Datasheets SI3499DV
Video File MOSFET Technologies for Power Conversion
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 750mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Vgs (Max) ±5V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI3499DV-T1-GE3CT