SI3456DDV-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products

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SI3456DDV-T1-GE3 N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

Product Overview

Digi-Key Part Number	SI3456DDV-T1-GE3CT-ND	Copy
Quantity Available	89,347 Can ship immediately
Manufacturer	Vishay Siliconix	Copy
Manufacturer Part Number	SI3456DDV-T1-GE3	Copy
Description	MOSFET N-CH 30V 6.3A 6-TSOP	Copy
Manufacturer Standard Lead Time	27 Weeks
Detailed Description	N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP	Copy

Documents & Media

Datasheets	SI3456DDV
Video File	MOSFET Technologies for Power Conversion
Online Catalog	N-Channel MOSFET (Metal Oxide)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	40 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	325pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.7W (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6