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SI2367DS-T1-GE3 P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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All prices are in USD.
Price Break Unit Price Extended Price
1 0.48000 $0.48
10 0.40800 $4.08
100 0.30590 $30.59
500 0.22434 $112.17
1,000 0.17335 $173.35
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Product Overview
Digi-Key Part Number SI2367DS-T1-GE3CT-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

SI2367DS-T1-GE3

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Description MOSFET P-CH 20V 3.8A SOT-23
Copy   MOSFET P-CH 20V 3.8A SOT-23
Detailed Description

P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Copy   P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Documents & Media
Datasheets SI2367DS
Video File MOSFET Technologies for Power Conversion
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 66 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 561pF @ 10V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI2367DS-T1-GE3CT
Alternate Package | This part is also available in the following packaging:
  • Tape & Reel (TR) ? : SI2367DS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 0
  • Unit Price: $0.15345

05:30:51 10/23/2018