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SI2347DS-T1-GE3 P-Channel 30V 5A (Tc) 1.7W (Tc) Surface Mount SOT-23-3
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Quantity
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Price Break Unit Price Extended Price
1 0.42000 $0.42
10 0.31400 $3.14
100 0.19570 $19.57
500 0.13390 $66.95
1,000 0.10300 $103.00
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Alternate Package
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  • Minimum Quantity: 3,000
  • Quantity Available: 9,000 - Immediate
  • Unit Price: $0.09000
  • Digi-Reel®  : SI2347DS-T1-GE3DKR-ND
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  • Quantity Available: 9,922 - Immediate
  • Unit Price: Digi-Reel®

SI2347DS-T1-GE3

Datasheet
Digi-Key Part Number SI2347DS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2347DS-T1-GE3
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Description MOSFET P-CH 30V 5A SOT-23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 5A (Tc) 1.7W (Tc) Surface Mount SOT-23-3

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Documents & Media
Datasheets SI2347DS-T1-GE3
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Wafer Fab Addition 22/Jun/2015
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 15V
FET Feature -
Power Dissipation (Max) 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2347DS-T1-GE3CT