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SI2337DS-T1-GE3 P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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3,039 In Stock
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Quantity
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Price Break Unit Price Extended Price
1 0.99000 $0.99
10 0.88100 $8.81
100 0.62730 $62.73
500 0.53168 $265.84
1,000 0.43312 $433.12
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  • Tape & Reel (TR)  : SI2337DS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: $0.40600
  • Digi-Reel®  : SI2337DS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 3,039 - Immediate
  • Unit Price: Digi-Reel®

SI2337DS-T1-GE3

Datasheet
Digi-Key Part Number SI2337DS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2337DS-T1-GE3
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Description MOSFET P-CH 80V 2.2A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2337DS
Video File MOSFET Technologies for Power Conversion
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 40V
FET Feature -
Power Dissipation (Max) 760mW (Ta), 2.5W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2337DS-T1-GE3CT