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SI2333DDS-T1-GE3 P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Price Break Unit Price Extended Price
1 0.49000 $0.49
10 0.41000 $4.10
100 0.30760 $30.76
500 0.22560 $112.80
1,000 0.17432 $174.32
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Product Overview
Digi-Key Part Number SI2333DDS-T1-GE3CT-ND
Copy   SI2333DDS-T1-GE3CT-ND
Quantity Available 0
Manufacturer

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Manufacturer Part Number

SI2333DDS-T1-GE3

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Description MOSFET P-CH 12V 6A SOT23
Copy   MOSFET P-CH 12V 6A SOT23
Detailed Description

P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Copy   P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Documents & Media
Datasheets Si2333DDS
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Wafer Fab Addition 22/Jun/2015
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 28 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1275pF @ 6V
FET Feature -
Power Dissipation (Max) 1.2W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI2333DDS-T1-GE3CT
Alternate Package | This part is also available in the following packaging:

03:44:26 1/17/2019