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SI2333CDS-T1-E3 P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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23,976 In Stock
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Quantity
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Price Break Unit Price Extended Price
1 0.47000 $0.47
10 0.40000 $4.00
25 0.37360 $9.34
100 0.27740 $27.74
250 0.26356 $65.89
500 0.21660 $108.30
1,000 0.17606 $176.06
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  • Minimum Quantity: 3,000
  • Quantity Available: 21,000 - Immediate
  • Unit Price: $0.16539
  • Digi-Reel®  : SI2333CDS-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 23,976 - Immediate
  • Unit Price: Digi-Reel®

SI2333CDS-T1-E3

Datasheet
Digi-Key Part Number SI2333CDS-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI2333CDS-T1-E3
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Description MOSFET P-CH 12V 7.1A SOT23-3
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Detailed Description

P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets Si2333CDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si2333CDS
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 6V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2333
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2333CDS-T1-E3CT