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Product Overview
Digi-Key Part Number SI2309CDS-T1-GE3CT-ND
Quantity Available 0
Manufacturer

Manufacturer Part Number

SI2309CDS-T1-GE3

Description MOSFET P-CH 60V 1.6A SOT23-3
Manufacturer Standard Lead Time 33 Weeks
Detailed Description

P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Documents & Media
Datasheets SI2309CDS
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Ultra Librarian
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 345 mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 30V
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI2309CDS-T1-GE3CT

13:44:03 8/17/2018

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.68000 $0.68
10 0.56900 $5.69
100 0.42640 $42.64
500 0.31270 $156.35
1,000 0.24164 $241.64

Submit a request for quotation on quantities greater than those displayed.

Alternate Package | This part is also available in the following packaging:
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