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SI2307BDS-T1-GE3 P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount
Product Overview
Digi-Key Part Number SI2307BDS-T1-GE3CT-ND
Copy   SI2307BDS-T1-GE3CT-ND
Quantity Available 2,803
Can ship immediately
Manufacturer

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Manufacturer Part Number

SI2307BDS-T1-GE3

Copy   SI2307BDS-T1-GE3
Description MOSFET P-CH 30V 2.5A SOT23-3
Copy   MOSFET P-CH 30V 2.5A SOT23-3
Manufacturer Standard Lead Time 33 Weeks
Detailed Description

P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount

Copy   P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount
Documents & Media
Datasheets SI2307BDS
Video File MOSFET Technologies for Power Conversion
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 78 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 15V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 1
Other Names SI2307BDS-T1-GE3CT
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.71000 $0.71
10 0.62200 $6.22
100 0.47970 $47.97
500 0.35536 $177.68
1,000 0.28428 $284.28

Submit a request for quotation on quantities greater than those displayed.

Alternate Package | This part is also available in the following packaging:
  • Digi-Reel® ? : SI2307BDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 2,803 - Immediate
  • Unit Price: Digi-Reel®

09:03:02 9/18/2018