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SI2306BDS-T1-GE3 N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Product Overview
Digi-Key Part Number SI2306BDS-T1-GE3CT-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

SI2306BDS-T1-GE3

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Description MOSFET N-CH 30V 3.16A SOT23-3
Copy   MOSFET N-CH 30V 3.16A SOT23-3
Detailed Description

N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Copy   N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Documents & Media
Datasheets Si2306BDS
Video File MOSFET Technologies for Power Conversion
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 47 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 305pF @ 15V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI2306BDS-T1-GE3CT
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.73000 $0.73
10 0.61600 $6.16
100 0.46200 $46.20
500 0.33876 $169.38
1,000 0.26177 $261.77

Submit a request for quotation on quantities greater than those displayed.

Alternate Package | This part is also available in the following packaging:

02:02:06 9/20/2018