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SI2303CDS-T1-GE3 P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)
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Price Break Unit Price Extended Price
1 0.56000 $0.56
10 0.44300 $4.43
100 0.30420 $30.42
500 0.20856 $104.28
1,000 0.15642 $156.42
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Product Overview
Digi-Key Part Number SI2303CDS-T1-GE3CT-ND
Copy   SI2303CDS-T1-GE3CT-ND
Quantity Available 119
Can ship immediately
Manufacturer

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Manufacturer Part Number

SI2303CDS-T1-GE3

Copy   SI2303CDS-T1-GE3
Description MOSFET P-CH 30V 2.7A SOT23-3
Copy   MOSFET P-CH 30V 2.7A SOT23-3
Detailed Description

P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)

Copy   P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)
Documents & Media
Datasheets SI2303CDS
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Ultra Librarian
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 15V
FET Feature -
Power Dissipation (Max) 1W (Ta), 2.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI2303CDS-T1-GE3CT
Alternate Package | This part is also available in the following packaging:
  • Digi-Reel® ? : SI2303CDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 119 - Immediate
  • Unit Price: Digi-Reel®

01:34:41 12/12/2018