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SI2302DDS-T1-GE3 N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
31,170 In Stock
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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.47000 $0.47
10 0.38100 $3.81
25 0.34840 $8.71
100 0.21870 $21.87
250 0.21628 $54.07
500 0.20250 $101.25
1,000 0.13770 $137.70
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  • Minimum Quantity: 3,000
  • Quantity Available: 27,000 - Immediate
  • Unit Price: $0.13203
  • Digi-Reel®  : SI2302DDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 31,170 - Immediate
  • Unit Price: Digi-Reel®

SI2302DDS-T1-GE3

Datasheet
Digi-Key Part Number SI2302DDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2302DDS-T1-GE3
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Description MOSFET N-CHAN 20V SOT23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2302DDS
PCN Assembly/Origin Mult Dev Mfg/Test Qual 11/Sep/2019
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2302
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2302DDS-T1-GE3CT