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SI2301CDS-T1-GE3 P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
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64,642 In Stock
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Quantity
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Price Break Unit Price Extended Price
1 0.42000 $0.42
10 0.31400 $3.14
100 0.19570 $19.57
500 0.13390 $66.95
1,000 0.10300 $103.00
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Alternate Package
  • Tape & Reel (TR)  : SI2301CDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 63,000 - Immediate
  • Unit Price: $0.09000
  • Digi-Reel®  : SI2301CDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 64,642 - Immediate
  • Unit Price: Digi-Reel®

SI2301CDS-T1-GE3

Datasheet
Digi-Key Part Number SI2301CDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2301CDS-T1-GE3
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Description MOSFET P-CH 20V 3.1A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2301CDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI2301CDS
EDA / CAD Models Download from Ultra Librarian
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V
FET Feature -
Power Dissipation (Max) 860mW (Ta), 1.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2301CDS-T1-GE3CT