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Product Overview
Digi-Key Part Number SI1416EDH-T1-GE3CT-ND
Quantity Available 0
Manufacturer

Manufacturer Part Number

SI1416EDH-T1-GE3

Description MOSFET N-CH 30V 3.9A SOT-363
Detailed Description

N-Channel 30V 3.9A (Tc) 2.8W (Tc) Surface Mount SOT-363

Documents & Media
Datasheets SI1416EDH
Video File MOSFET Technologies for Power Conversion
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 58 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI1416EDH-T1-GE3CT

01:27:20 7/17/2018

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.59000 $0.59
10 0.46500 $4.65
100 0.31920 $31.92
500 0.21890 $109.45
1,000 0.16417 $164.17

Submit a request for quotation on quantities greater than those displayed.

Alternate Package | This part is also available in the following packaging:
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