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SI1308EDL-T1-GE3 N-Channel 30V 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SOT-323
Price & Procurement
40,581 In Stock
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Quantity
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Price Break Unit Price Extended Price
1 0.44000 $0.44
10 0.35300 $3.53
25 0.32240 $8.06
100 0.20250 $20.25
250 0.20024 $50.06
500 0.18750 $93.75
1,000 0.12750 $127.50
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  • Minimum Quantity: 3,000
  • Quantity Available: 39,000 - Immediate
  • Unit Price: $0.12225
  • Digi-Reel®  : SI1308EDL-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 40,581 - Immediate
  • Unit Price: Digi-Reel®

SI1308EDL-T1-GE3

Datasheet
Digi-Key Part Number SI1308EDL-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1308EDL-T1-GE3
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Description MOSFET N-CH 30V 1.4A SC-70-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 30V 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SOT-323

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Documents & Media
Datasheets SI1308EDL
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Wafer Site 12/Sep/2018
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 132mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 15V
FET Feature -
Power Dissipation (Max) 400mW (Ta), 500mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-323
Package / Case SC-70, SOT-323
Base Part Number SI1308
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1308EDL-T1-GE3CT