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SI1016X-T1-GE3 Mosfet Array N and P-Channel 20V 485mA, 370mA 250mW Surface Mount SC-89-6
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Price Break Unit Price Extended Price
1 0.44000 $0.44
10 0.37500 $3.75
25 0.35000 $8.75
100 0.26000 $26.00
500 0.20300 $101.50
1,000 0.16500 $165.00
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  • Unit Price: $0.15500
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SI1016X-T1-GE3

Datasheet
Digi-Key Part Number SI1016X-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1016X-T1-GE3
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Description MOSFET N/P-CH 20V SC89-6
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array N and P-Channel 20V 485mA, 370mA 250mW Surface Mount SC-89-6

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Documents & Media
Datasheets Si1016X
HTML Datasheet Si1016X
Online Catalog N and P-Channel Logic Level Gate FETs
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 485mA, 370mA
Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SC-89-6
Base Part Number SI1016
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1016X-T1-GE3CT