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SI1012R-T1-GE3 N-Channel 20V 500mA (Ta) 150mW (Ta) Surface Mount SC-75A
Price & Procurement
160,900 In Stock
Can ship today if order is placed within:
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.48000 $0.48
10 0.38700 $3.87
100 0.26370 $26.37
500 0.19776 $98.88
1,000 0.14832 $148.32
Import Tariff may apply to this part if shipping to the United States

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI1012R-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 159,000 - Immediate
  • Unit Price: $0.13200
  • Digi-Reel®  : SI1012R-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 160,900 - Immediate
  • Unit Price: Digi-Reel®

SI1012R-T1-GE3

Datasheet
Digi-Key Part Number SI1012R-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1012R-T1-GE3
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Description MOSFET N-CH 20V 500MA SC-75A
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Manufacturer Standard Lead Time 33 Weeks
Detailed Description

N-Channel 20V 500mA (Ta) 150mW (Ta) Surface Mount SC-75A

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Documents & Media
Datasheets SI1012R,X
Video File MOSFET Technologies for Power Conversion
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Vgs (Max) ±6V
FET Feature -
Power Dissipation (Max) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-75A
Package / Case SC-75A
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1012R-T1-GE3CT