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Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 3.52000 $3.52
50 2.82960 $141.48
100 2.57810 $257.81
500 2.08766 $1,043.83
1,000 1.76068 $1,760.68
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Product Overview
Digi-Key Part Number IRLI640GPBF-ND
Quantity Available 604
Can ship immediately

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Manufacturer Part Number


Copy   IRLI640GPBF
Description MOSFET N-CH 200V 9.9A TO220FP
Copy   MOSFET N-CH 200V 9.9A TO220FP
Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 200V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3

Copy   N-Channel 200V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3
Documents & Media
Datasheets IRLI640G
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Mult Devices 18/Jul/2017
EDA / CAD Models ? Download from Ultra Librarian
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Vishay Siliconix
Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 180 mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3 Full Pack, Isolated Tab
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 50
Other Names *IRLI640GPBF

15:16:36 3/25/2019