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Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.54000 $1.54
10 1.36400 $13.64
100 1.07800 $107.80
500 0.83600 $418.00

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IRFD123PBF-ND
Copy   IRFD123PBF-ND
Quantity Available 549
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRFD123PBF

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Description MOSFET N-CH 100V 1.3A 4-DIP
Copy   MOSFET N-CH 100V 1.3A 4-DIP
Manufacturer Standard Lead Time 9 Weeks
Detailed Description

N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Copy   N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Documents & Media
Datasheets IRFD123
Video File MOSFET Technologies for Power Conversion
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270 mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 2,500
Other Names *IRFD123PBF

12:07:32 12/17/2018