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Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.93000 $0.93
10 0.81700 $8.17
100 0.63020 $63.02
500 0.46684 $233.42
1,000 0.37347 $373.47

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IRFD110PBF-ND
Copy   IRFD110PBF-ND
Quantity Available 21,692
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRFD110PBF

Copy   IRFD110PBF
Description MOSFET N-CH 100V 1A 4-DIP
Copy   MOSFET N-CH 100V 1A 4-DIP
Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Copy   N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Documents & Media
Datasheets IRFD110
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Ultra Librarian
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 540 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 100
Other Names *IRFD110PBF

14:16:32 10/17/2018