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929 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.92000 $1.92
10 1.72500 $17.25
25 1.62760 $40.69
100 1.26960 $126.96
250 1.23708 $309.27
500 1.07432 $537.16
1,000 0.91154 $911.54
2,500 0.89852 $2,246.30
5,000 0.83341 $4,167.04
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IRFBG30PBF

Datasheet
Digi-Key Part Number IRFBG30PBF-ND
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Manufacturer

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Manufacturer Part Number IRFBG30PBF
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Description MOSFET N-CH 1000V 3.1A TO-220AB
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB

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Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRFBG30PBF