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Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > Vishay Siliconix IRF620SPBF
IRF620SPBF Vishay Siliconix | IRF620SPBF-ND DigiKey Electronics

IRF620SPBF N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D2PAK
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.25000 $2.25
50 1.81220 $90.61
100 1.63100 $163.10
500 1.26858 $634.29
1,000 1.05111 $1,051.11
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Product Overview
Digi-Key Part Number IRF620SPBF-ND
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Quantity Available 974
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRF620SPBF

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Description MOSFET N-CH 200V 5.2A D2PAK
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Manufacturer Standard Lead Time 10 Weeks
Detailed Description

N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D2PAK

Copy   N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D2PAK
Documents & Media
Datasheets IRF620S, SiHF620S
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Additional Assembly Site 21/Oct/2016
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 3W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 50
Other Names *IRF620SPBF

03:06:48 12/10/2018