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4,313 In Stock
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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.88000 $0.88
10 0.78700 $7.87
25 0.74680 $18.67
100 0.56010 $56.01
250 0.55472 $138.68
500 0.47472 $237.36
1,000 0.38672 $386.72
2,500 0.38138 $953.45
5,000 0.34671 $1,733.55
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IRF510PBF

Datasheet
Digi-Key Part Number IRF510PBF-ND
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Manufacturer

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Manufacturer Part Number IRF510PBF
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Description MOSFET N-CH 100V 5.6A TO-220AB
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRF510
Other Related Documents Packaging Information
Video File MOSFET Technologies for Power Conversion
Design Resources Available In the Digi-Key KiCad Library
PCN Design/Specification Mult Dev Material Chg 30/Aug/2019
HTML Datasheet Packaging Information
EDA / CAD Models Download from Ultra Librarian
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
FET Feature -
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRF510
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF510PBF