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2N7002K-T1-GE3 N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236
Price & Procurement
23,705 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.22000 $0.22
10 0.18000 $1.80
25 0.15040 $3.76
100 0.07350 $7.35
250 0.07232 $18.08
500 0.06128 $30.64
1,000 0.04259 $42.59

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Alternate Package
  • Tape & Reel (TR)  : 2N7002K-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 21,000 - Immediate
  • Unit Price: $0.03958
  • Digi-Reel®  : 2N7002K-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 23,705 - Immediate
  • Unit Price: Digi-Reel®

2N7002K-T1-GE3

Datasheet
Digi-Key Part Number 2N7002K-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number 2N7002K-T1-GE3
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Description MOSFET N-CH 60V 300MA SOT23-3
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Detailed Description

N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236

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Documents & Media
Datasheets 2N7002K Datasheet
Video File MOSFET Technologies for Power Conversion
HTML Datasheet 2N7002K Datasheet
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number 2N7002
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 2N7002K-T1-GE3CT