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TP65H050WS N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Price & Procurement
508 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 15.50000 $15.50
10 14.24300 $142.43
25 13.65320 $341.33
100 12.02940 $1,202.94
250 11.43900 $2,859.75
500 10.70100 $5,350.50
1,000 9.81540 $9,815.40

Submit a request for quotation on quantities greater than those displayed.

TP65H050WS

Datasheet
Digi-Key Part Number TP65H050WS-ND
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Manufacturer

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Manufacturer Part Number TP65H050WS
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Description GANFET N-CH 650V 34A TO247-3
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3

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Product Attributes
Type Description Select All
Categories
Manufacturer Transphorm
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 400V
FET Feature -
Power Dissipation (Max) 119W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
California Prop 65
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Additional Resources
Standard Package 30