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TP65H050WS N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 16.19000 $16.19
10 14.72000 $147.20
30 13.61600 $408.48
120 12.51200 $1,501.44
270 11.40800 $3,080.16

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number TP65H050WS-ND
Copy   TP65H050WS-ND
Quantity Available 301
Can ship immediately
Manufacturer

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Manufacturer Part Number

TP65H050WS

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Description GANFET N-CH 650V 34A TO247-3
Copy   GANFET N-CH 650V 34A TO247-3
Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3

Copy   N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Product Attributes Select All
Categories
Manufacturer Transphorm
Series -
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 400V
FET Feature -
Power Dissipation (Max) 119W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
California Prop 65
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  • SI8273AB-IS1 - Silicon Labs | 336-3534-5-ND DigiKey Electronics
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Additional Resources
Standard Package ? 30

23:15:24 2/23/2019