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TPN8R903NL,LQ N-Channel 30V 20A (Tc) 700mW (Ta), 22W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Price & Procurement
1,899 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.66000 $0.66
10 0.57800 $5.78
25 0.54280 $13.57
100 0.39400 $39.40
250 0.37996 $94.99
500 0.32918 $164.59
1,000 0.28016 $280.16

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Alternate Package
  • Tape & Reel (TR)  : TPN8R903NLLQTR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 0
  • Unit Price: $0.25500
  • Digi-Reel®  : TPN8R903NLLQDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 1,899 - Immediate
  • Unit Price: Digi-Reel®

TPN8R903NL,LQ

Datasheet
Digi-Key Part Number TPN8R903NLLQCT-ND
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Manufacturer

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Manufacturer Part Number TPN8R903NL,LQ
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Description MOSFET N-CH 30V 20A TSON
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 30V 20A (Tc) 700mW (Ta), 22W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

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Documents & Media
Datasheets TPN8R903NL
Featured Product U-MOSⅧ-H MOSFETs
EDA / CAD Models Download from Ultra Librarian
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 15V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 22W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names TPN8R903NLLQCT