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TPH6R30ANL,L1Q N-Channel 100V 66A (Ta), 45A (Tc) 2.5W (Ta), 54W (Tc) Surface Mount 8-SOP Advance (5x5)
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5,000 0.39390 $1,969.50

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TPH6R30ANL,L1Q

Datasheet
Digi-Key Part Number TPH6R30ANLL1Q-ND
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Manufacturer

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Manufacturer Part Number TPH6R30ANL,L1Q
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Description X35 PB-F POWER MOSFET TRANSISTOR
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 100V 66A (Ta), 45A (Tc) 2.5W (Ta), 54W (Tc) Surface Mount 8-SOP Advance (5x5)

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Documents & Media
Datasheets TPH6R30ANL
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Tape & Reel (TR) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 50V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 54W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 5,000
Other Names TPH6R30ANLL1Q