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Product Overview
Digi-Key Part Number TK6A65D(STA4QM)-ND
Quantity Available 2,307
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 650V 5A TO-220SIS
Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 650V 6A (Ta) 45W (Tc) Through Hole TO-220SIS

Documents & Media
Datasheets TK6A65D
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.11 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
Additional Resources
Standard Package ? 50
Other Names TK6A65D(STA4QM)

14:26:57 7/21/2018

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 2.24000 $2.24
50 1.80260 $90.13
100 1.62240 $162.24
500 1.26184 $630.92
1,000 1.04552 $1,045.52

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