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Product Overview
Digi-Key Part Number TK6A60DSTA4QM-ND
Quantity Available 2,318
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 600V 6A TO220SIS
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 600V 6A (Ta) 40W (Tc) Through Hole TO-220SIS

Documents & Media
Datasheets TK6A60D
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Rds On (Max) @ Id, Vgs 1.25 Ohm @ 3A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
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Additional Resources
Standard Package ? 2,500
Other Names TK6A60DSTA4QM

12:44:36 4/19/2018

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 1.91000 $1.91
10 1.69300 $16.93
100 1.33830 $133.83
500 1.03788 $518.94
1,000 0.81938 $819.38

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