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Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 1.83000 $1.83
10 1.62000 $16.20
100 1.28010 $128.01
500 0.99276 $496.38
1,000 0.78375 $783.75

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number TK6A60DSTA4QM-ND
Quantity Available 2,234
Can ship immediately

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Manufacturer Part Number


Copy   TK6A60D(STA4,Q,M)
Description MOSFET N-CH 600V 6A TO220SIS
Copy   MOSFET N-CH 600V 6A TO220SIS
Detailed Description

N-Channel 600V 6A (Ta) 40W (Tc) Through Hole TO-220SIS

Copy   N-Channel 600V 6A (Ta) 40W (Tc) Through Hole TO-220SIS
Documents & Media
Datasheets TK6A60D
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.25 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 2,500
Other Names TK6A60DSTA4QM

16:26:09 12/14/2018