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Product Overview
Digi-Key Part Number TK17E65WS1X-ND
Quantity Available 224
Can ship immediately
Manufacturer

Manufacturer Part Number

TK17E65W,S1X

Description MOSFET N-CH 650V 17.3A TO-220AB
Detailed Description

N-Channel 650V 17.3A (Ta) 165W (Tc) Through Hole TO-220

Documents & Media
Datasheets TK17E65W
Product Attributes Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200 mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 300V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
Additional Resources
Standard Package ? 50
Other Names TK17E65W,S1X(S
TK17E65WS1X

07:05:43 8/16/2018

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 3.61000 $3.61
50 2.90320 $145.16
100 2.64510 $264.51

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