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TK16J60W,S1VQ N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N)
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Quantity
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Price Break Unit Price Extended Price
1 5.24000 $5.24
25 4.20760 $105.19

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Product Overview
Digi-Key Part Number TK16J60WS1VQ-ND
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Quantity Available 29
Can ship immediately
Manufacturer

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Manufacturer Part Number

TK16J60W,S1VQ

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Description MOSFET N CH 600V 15.8A TO-3P(N)
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Detailed Description

N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N)

Copy   N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N)
Documents & Media
Datasheets TK16J60W
Product Attributes Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 300V
FET Feature Super Junction
Power Dissipation (Max) 130W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 25
Other Names TK16J60W,S1VQ(O
TK16J60WS1VQ

07:59:34 11/20/2018