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SSM3J56MFV,L3F P-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount VESM
Price & Procurement
154,773 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.43000 $0.43
10 0.32000 $3.20
25 0.28000 $7.00
100 0.15200 $15.20
250 0.15120 $37.80
500 0.12400 $62.00
1,000 0.09200 $92.00
2,500 0.08080 $202.00

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SSM3J56MFVL3FTR-ND
  • Minimum Quantity: 8,000
  • Quantity Available: 152,000 - Immediate
  • Unit Price: $0.07400
  • Digi-Reel®  : SSM3J56MFVL3FDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 154,773 - Immediate
  • Unit Price: Digi-Reel®

SSM3J56MFV,L3F

Datasheet
Digi-Key Part Number SSM3J56MFVL3FCT-ND
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Manufacturer

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Manufacturer Part Number SSM3J56MFV,L3F
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Description MOSFET P-CH 20V 0.8A VESM
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

P-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount VESM

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Documents & Media
Datasheets SSM3J56MFV
Product Training Modules General Purpose Discrete Items
EDA / CAD Models Download from Ultra Librarian
Online Catalog P-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVI
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id -
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 10V
FET Feature -
Power Dissipation (Max) 150mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package VESM
Package / Case SOT-723
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SSM3J56MFVL3F(TCT
SSM3J56MFVL3F(TCT-ND
SSM3J56MFVL3FCT