2SD2206(TE6,F,M) Bipolar (BJT) Transistor NPN 100V 2A 100MHz 900mW Through Hole TO-92MOD
Product Overview
Digi-Key Part Number 2SD2206(TE6FM)-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

2SD2206(TE6,F,M)

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Description TRANS NPN 2A 100V TO226-3
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Detailed Description

Bipolar (BJT) Transistor NPN 100V 2A 100MHz 900mW Through Hole TO-92MOD

Copy   Bipolar (BJT) Transistor NPN 100V 2A 100MHz 900mW Through Hole TO-92MOD
Documents & Media
Datasheets 2SD2206
Product Attributes Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging ? Bulk ?
Part Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A, 2V
Power - Max 900mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 1
Other Names 2SD2206(TE6FM)
2SD2206TE6FM

11:50:30 10/23/2018