2SC2235-Y(T6KMATFM Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900mW Through Hole TO-92MOD
Product Overview
Digi-Key Part Number 2SC2235-Y(T6KMATFM-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

2SC2235-Y(T6KMATFM

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Description TRANS NPN 800MA 120V TO226-3
Copy   TRANS NPN 800MA 120V TO226-3
Detailed Description

Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900mW Through Hole TO-92MOD

Copy   Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900mW Through Hole TO-92MOD
Documents & Media
Datasheets 2SC2235
Product Attributes Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging ? Bulk ?
Part Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V
Power - Max 900mW
Frequency - Transition 120MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 1
Other Names 2SC2235YT6KMATFM

12:44:44 11/12/2018