2SB1481(TOJS,Q,M) Bipolar (BJT) Transistor PNP 100V 4A 2W Through Hole TO-220NIS
Product Overview
Digi-Key Part Number 2SB1481(TOJSQM)-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

2SB1481(TOJS,Q,M)

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Description TRANS PNP 4A 100V TO220-3
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Detailed Description

Bipolar (BJT) Transistor PNP 100V 4A 2W Through Hole TO-220NIS

Copy   Bipolar (BJT) Transistor PNP 100V 4A  2W Through Hole TO-220NIS
Documents & Media
Datasheets 2SB1481
Product Attributes Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging ? Bulk ?
Part Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 6mA, 3A
Current - Collector Cutoff (Max) 2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A, 2V
Power - Max 2W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
Additional Resources
Standard Package ? 1
Other Names 2SB1481(TOJSQM)
2SB1481TOJSQM

09:06:34 10/18/2018