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CSD19501KCS N-Channel 80V 100A (Ta) 217W (Tc) Through Hole TO-220-3
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.16000 $2.16
10 1.95300 $19.53
50 1.74360 $87.18
100 1.56920 $156.92
500 1.22046 $610.23
1,000 1.01123 $1,011.23
2,500 0.94149 $2,353.73
5,000 0.90662 $4,533.10
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Product Overview
Digi-Key Part Number 296-37286-5-ND
Copy   296-37286-5-ND
Quantity Available 2,379
Can ship immediately
Manufacturer

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Manufacturer Part Number

CSD19501KCS

Copy   CSD19501KCS
Description MOSFET N-CH 80V 100A TO220
Copy   MOSFET N-CH 80V 100A TO220
Manufacturer Standard Lead Time 35 Weeks
Detailed Description

N-Channel 80V 100A (Ta) 217W (Tc) Through Hole TO-220-3

Copy   N-Channel 80V 100A (Ta) 217W (Tc) Through Hole TO-220-3
Documents & Media
Datasheets CSD19501KCS
Featured Product Power Management
PCN Assembly/Origin Site Chg 04/Dec/2015
Site Chg 25/Jan/2016
Manufacturer Product Page CSD19501KCS Specifications
EDA / CAD Models ? Download from Ultra Librarian
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer Texas Instruments
Series NexFET™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.6 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 40V
FET Feature -
Power Dissipation (Max) 217W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Request inventory verification / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 50
Other Names 296-37286-5
CSD19501KCS-ND

19:09:06 12/11/2018