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Product Overview
Digi-Key Part Number TSM60NB1R4CPROGCT-ND
Quantity Available 2,355
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CHANNEL 600V 3A TO252
Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 600V 3A (Tc) 28.4W (Tc) Surface Mount TO-252, (D-Pak)

Documents & Media
Datasheets TSM60NB1R4CP
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.12nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 257.3pF @ 100V
FET Feature -
Power Dissipation (Max) 28.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Additional Resources
Standard Package ? 1
Other Names TSM60NB1R4CP ROGCT

05:21:02 7/20/2018

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 0.75000 $0.75
10 0.63000 $6.30
100 0.47260 $47.26
500 0.34658 $173.29

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