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Product Overview
Digi-Key Part Number TSM60NB190CM2RNGCT-ND
Quantity Available 1,521
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 600V 18A TO263
Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 600V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D²Pak)

Documents & Media
Datasheets TSM60NB190CM2
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1273pF @ 100V
FET Feature -
Power Dissipation (Max) 150.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names TSM60NB190CM2 RNGCT

11:12:28 8/21/2018

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 2.96000 $2.96
10 2.67500 $26.75
100 2.14920 $214.92

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