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STP4NK80Z N-Channel 800V 3A (Tc) 80W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1.74000 $1.74
50 1.40660 $70.33
100 1.26600 $126.60
500 0.98464 $492.32
1,000 0.81584 $815.84

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number 497-3192-5-ND
Copy   497-3192-5-ND
Quantity Available 2,046
Can ship immediately
Manufacturer

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Manufacturer Part Number

STP4NK80Z

Copy   STP4NK80Z
Description MOSFET N-CH 800V 3A TO-220
Copy   MOSFET N-CH 800V 3A TO-220
Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 800V 3A (Tc) 80W (Tc) Through Hole TO-220AB

Copy   N-Channel 800V 3A (Tc) 80W (Tc) Through Hole TO-220AB
Documents & Media
Datasheets ST(D,P)4NK80Z(-1,FP)
Other Related Documents STP4NK80Z View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
Featured Product Power MOSFETs
EDA / CAD Models ? Download from Ultra Librarian
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer STMicroelectronics
Series SuperMESH™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 50
Other Names 497-3192-5

15:42:01 1/17/2019