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SCTWA50N120 N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™
Price & Procurement
480 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 35.32000 $35.32
10 32.57400 $325.74
100 27.81600 $2,781.60
Import Tariff may apply to this part if shipping to the United States

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SCTWA50N120

Datasheet
Digi-Key Part Number 497-18637-ND
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Manufacturer

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Manufacturer Part Number SCTWA50N120
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Description MOSFET N-CH 1200V 65A HIP247
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Manufacturer Standard Lead Time 52 Weeks
Detailed Description

N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™

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Documents & Media
Datasheets SCTWA50N120
Online Catalog N-Channel SiCFET (Silicon Carbide)
Product Attributes
Type Description Select All
Categories
Manufacturer STMicroelectronics
Series -
Part Status Active
Gate Charge (Qg) (Max) @ Vgs 122nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 400V
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 3V @ 1mA
Vgs (Max) +25V, -10V
FET Feature -
Power Dissipation (Max) 318W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
Base Part Number SCTWA
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 600
Other Names 497-18637
SCTWA50N120-ND