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SCTH90N65G2V-7 N-Channel 650V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
Price & Procurement
1,000 In Stock
Can ship today if order is placed within:
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 50.14000 $50.14
10 47.09700 $470.97
100 42.23520 $4,223.52
Import Tariff may apply to this part if shipping to the United States

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : 497-18352-2-ND
  • Minimum Quantity: 1,000
  • Quantity Available: 1,000 - Immediate
  • Unit Price: $39.23500
  • Digi-Reel®  : 497-18352-6-ND
  • Minimum Quantity: 1
  • Quantity Available: 1,000 - Immediate
  • Unit Price: Digi-Reel®

SCTH90N65G2V-7

Datasheet
Digi-Key Part Number 497-18352-1-ND
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Manufacturer

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Manufacturer Part Number SCTH90N65G2V-7
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Description SILICON CARBIDE POWER MOSFET 650
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Manufacturer Standard Lead Time 20 Weeks
Detailed Description

N-Channel 650V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7

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Documents & Media
Datasheets SCTH90N65G2V-7
Online Catalog N-Channel SiCFET (Silicon Carbide)
Product Attributes
Type Description Select All
Categories
Manufacturer STMicroelectronics
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 157nC @ 18V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 400V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Part Number SCTH90
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 497-18352-1