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SCT3120ALHRC11 N-Channel 650V 21A (Tc) 103W Through Hole TO-247N
Price & Procurement
645 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 11.95000 $11.95
10 10.98100 $109.81
25 10.52600 $263.15
100 9.27440 $927.44
250 8.81920 $2,204.80
500 8.25022 $4,125.11
1,000 7.56743 $7,567.43

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SCT3120ALHRC11

Datasheet
Digi-Key Part Number SCT3120ALHRC11-ND
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Manufacturer

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Manufacturer Part Number SCT3120ALHRC11
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Description AUTOMOTIVE GRADE N-CHANNEL SIC P
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Manufacturer Standard Lead Time 21 Weeks
Detailed Description

N-Channel 650V 21A (Tc) 103W Through Hole TO-247N

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Documents & Media
Datasheets SCT3120ALHR
Other Related Documents SCT PPAP Statement
Featured Product SiC Power MOSFETs
3rd Generation Automotive-Grade SiC MOSFETs
Online Catalog N-Channel SiCFET (Silicon Carbide)
Product Attributes
Type Description Select All
Categories
Manufacturer Rohm Semiconductor
Series Automotive, AEC-Q101
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 18V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V
FET Feature -
Power Dissipation (Max) 103W
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 30