RUR020N02TL Rohm Semiconductor | Discrete Semiconductor Products

This feature is only available for registered users. Please Login or Register.

This feature is temporarily unavailable. We are working diligently to get this fixed. Thank you for your patience.

RUR020N02TL N-Channel 20V 2A (Ta) 540mW (Ta) Surface Mount TSMT3

Product Overview

Digi-Key Part Number	RUR020N02TLCT-ND	Copy
Quantity Available	13,364 Can ship immediately
Manufacturer	Rohm Semiconductor	Copy
Manufacturer Part Number	RUR020N02TL	Copy
Description	MOSFET N-CH 20V 2A TSMT3	Copy
Detailed Description	N-Channel 20V 2A (Ta) 540mW (Ta) Surface Mount TSMT3	Copy

Documents & Media

Datasheets	RUR020N02 TSMT3 TL Taping Spec
Other Related Documents	TSMT3MAu Inner Structure TSMT3 Part Marking Transistor, MOSFET Flammability TSMT3 MOS Reliability Test
Environmental Information	Transistor, MOSFET Level 1 MSL Transistor Whisker Info TSMT3 Constitution Material List RUR020N02 ESD Data
PCN Design/Specification	TSMT Package Updates 24/Dec/2014
Simulation Models	RUR020N02 Spice Model RUR020N02 Thermal Model
Online Catalog	N-Channel MOSFET (Metal Oxide)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	105 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2nC @ 4.5V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 10V
FET Feature	-
Power Dissipation (Max)	540mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSMT3
Package / Case	SC-96