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BSM120D12P2C005 Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 120A (Tc) 780W Module
Product Overview
Digi-Key Part Number BSM120D12P2C005-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

BSM120D12P2C005

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Description MOSFET 2N-CH 1200V 120A MODULE
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Manufacturer Standard Lead Time 32 Weeks
Detailed Description

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 120A (Tc) 780W Module

Copy   Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 120A (Tc) 780W  Module
Product Attributes Select All
Categories
Manufacturer Rohm Semiconductor
Series -
Packaging ? Bulk ?
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V
Power - Max 780W
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case Module
Supplier Device Package Module
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 12
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 391.06000 $391.06
10 372.18300 $3,721.83

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10:49:19 9/18/2018