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FDU6N25 N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole I-PAK
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.67000 $0.67
10 0.57400 $5.74
25 0.53600 $13.40
100 0.42870 $42.87
500 0.33680 $168.40
2,500 0.23729 $593.22
5,000 0.22198 $1,109.90
Import Tariff may apply to this part if shipping to the United States

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number FDU6N25OS-ND
Copy   FDU6N25OS-ND
Quantity Available 5,028
Can ship immediately
Manufacturer

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Manufacturer Part Number

FDU6N25

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Description MOSFET N-CH 250V 4.4A IPAK-3
Copy   MOSFET N-CH 250V 4.4A IPAK-3
Manufacturer Standard Lead Time 4 Weeks
Detailed Description

N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole I-PAK

Copy   N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole I-PAK
Documents & Media
Datasheets FDU6N25
Environmental Information Material Declaration FDU6N25
PCN Design/Specification Logo 17/Aug/2017
PCN Packaging Tape and Box/Reel Barcode Update 07/Aug/2014
Mult Devices 24/Oct/2017
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer ON Semiconductor
Series UniFET™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Stub Leads, IPak
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package ? 5,040
Other Names FDU6N25-ND
FDU6N25OS

12:02:50 8/17/2019