FDP65N06 ON Semiconductor | Discrete Semiconductor Products

Product Overview

Digi-Key Part Number	FDP65N06-ND	Copy
Quantity Available	1,570 Can ship immediately
Manufacturer	ON Semiconductor	Copy
Manufacturer Part Number	FDP65N06	Copy
Description	MOSFET N-CH 60V 65A TO-220	Copy
Manufacturer Standard Lead Time	9 Weeks
Detailed Description	N-Channel 60V 65A (Tc) 135W (Tc) Through Hole TO-220-3	Copy

Documents & Media

Datasheets	FDP65N06 TO220B03 Pkg Drawing
PCN Design/Specification	Logo 17/Aug/2017
PCN Assembly/Origin	Description Chg 15/Feb/2016
PCN Packaging	Tape and Box/Reel Barcode Update 07/Aug/2014 Mult Devices 24/Oct/2017
Online Catalog	N-Channel MOSFET (Metal Oxide)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	ON Semiconductor
Series	UniFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	16 mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2170pF @ 25V
FET Feature	-
Power Dissipation (Max)	135W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3