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FDP61N20 N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 3.37000 $3.37
10 3.01300 $30.13
100 2.48610 $248.61
800 1.84193 $1,473.54
1,600 1.72481 $2,759.70
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Product Overview
Digi-Key Part Number FDP61N20-ND
Copy   FDP61N20-ND
Quantity Available 833
Can ship immediately

Factory Stock ?: 28,000
Manufacturer

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Manufacturer Part Number

FDP61N20

Copy   FDP61N20
Description MOSFET N-CH 200V 61A TO-220
Copy   MOSFET N-CH 200V 61A TO-220
Manufacturer Standard Lead Time 7 Weeks
Detailed Description

N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3

Copy   N-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3
Documents & Media
Datasheets FDP61N20
TO220B03 Pkg Drawing
PCN Design/Specification Logo 17/Aug/2017
PCN Assembly/Origin Wafer Fabrication 04/Feb/2013
Description Chg 15/Feb/2016
PCN Packaging Mult Devices 24/Oct/2017
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer ON Semiconductor
Series UniFET™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41 mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3380pF @ 25V
FET Feature -
Power Dissipation (Max) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 800

14:01:05 12/10/2018